In the 1990s, when the semiconductor industry required a stable continuous vaporization supply system for TEOS, Lintec was the first in the world to develop a direct vaporization system using a vaporizer and liquid mass flow.

Basic Principles of Liquid Vaporization Technology

Liquid vaporization approach
Liquid vaporization approach

The three states of matter are solid, liquid, and gas, which change with temperature and pressure.

  1. Temperature approach:MFC baking method, non-carrier vaporizer
  2. Temperature and pressure approach:Direct vaporization method, bubbling method
  3. Pressure approach:Low differential pressure MFC (MC-3000S)

Vapor pressure and vapor concentration

The calculation of gas concentration is “partial pressure ÷ total pressure × 100 = gas concentration (%)”.

The partial pressure of liquefied gas cannot exceed the vapor pressure curve.

steam pressure curve

The state of matter depends on temperature and pressure. When temperature is high, the force (vapor pressure) that causes a liquid to change to gas (vaporization) increases, and when temperature is low, the vapor pressure decreases. The vapor pressure curve represents the maximum amount of vapor pressure at a given temperature.。

Introduction of vaporization technology

Direct vaporization method

Direct vaporization method
Direct vaporization method

This method measures the mass of the liquid phase with a mass flow meter for liquids and vaporizes the entire amount in a vaporizer at a later stage.

Baking method

Baking method
Baking method

This method heats a liquid and controls the evaporated gas with a high-temperature gas mass flow controller. It is used in optical fiber manufacturing processes, etc.

Bubbling method

Bubbling method
Bubbling method

This is a method in which a carrier gas is passed through a liquid container to dissolve the vaporized gas in the carrier gas. This method is mainly used in MOCVD.

Liquid Vaporized Feedstock Results

chemical elementabbreviationchemical formulaCAS No.
AlTMAAl(CH3)375-24-1
TEAAl(C2H5)397-93-8
Al(MMP)3Al[CH3OCH2C(CH3)2O]3478695-89-5
DMAHH(CH3)2Al885-37-2
ASBOAl[OCH(CH3)CH2CH3]32269-22-9
BTEBB(OC2H5)3150-46-9
TMBB(OCH3)3121-43-7
TMABB[N(CH3)2]34375-83-1
BaBa(DPM)2Ba(C11H19O2)217594-47-7
Bi
Bi(CH3)3

593-91-9
CeCe(DPM)4Ce(C11H19O2)418960-54-8
ClCCl456-23-5
C2H3Cl379-00-5
C2Cl4127-18-4
CoCo AMD
CuCu(DPM)3Cu(C11H19O2)214040-05-2
Cu(hfac)(TMVS)C10H13CuF6O2 Si139566-53-3
Cu(EDMDD)2Cu[(CH3)3CC(O)CHC(O)CH(C2H5)C4H9]
GaTEG(C2H5)3Ga1115-99-7
TMG(CH3)3Ga1445-79-0
GeGe(OC2H5)414165-55-0
C4H12GeO4992-91-6
HfTDMAHHf[N(CH3)2]419782-68-4
TEMAHHf[N(C2H5)CH3]4352535-01-4
TDEAHHf[N(C2H5)2]419824-55-6
HTBHf(OtC4H9)42172-02-3
IIF57783-66-6
InIn(acac)3In(C5H7O2)314405-45-9
TMI(CH3)3In3385-78-2
TEIIn(C2H5)3923-34-2
LaLa(TMOD)3
NbPENNb(OCH2CH3)53236-82-6
NiNi AMD
PTMOPPO(OCH3)3512-56-1
TEPOPO(OC2H5)378-40-0
TMPP(CH3O)3121-45-9
PbPb(DPM)2Pb(C11H19O2)221319-43-7
Pb(thd)2
Pb(TMOD)2
PrPr(EtCp)3Pr(C5H4C2H5)3108-88-3
Pr(DPM)3Pr(C11H19O2)315492-48-5
PtC9H16Pt94442-22-5
RuRu(EtCp)2Ru(C2H5C5H4)232992-96-4
DERRu(C7H9)(C7H11)501652-75-1
SiTEOSSi(OC2H5)478-10-4
SiCl410026-04-7
TCSSiHCl310025-78-2
TMOSSi(OCH3)4681-84-5
HMDSC6H19NSi2999-97-3
HMDSOC6H18OSi2107-46-0
BTBAS[(CH3)3CNH]2SiH2186598-40-3
DIBDMSC10H24O2Si17980-32-4
TMSSi(CH3)475-76-3
DEMSC5H14O2Si2031-62-1
C3H10Si993-07-7
CH3Cl3Si75-79-6
OMCTS、D4C8H24O4Si4556-67-2
TMCTSC4H16O4Si42370-88-9
TDMASSiH[N(CH3)2]315112-89-7
TMDSC4H15NSi215933-59-2
C3H10O3Si2487-90-3
[(CH2=CH)(CH3)SiO]42554-06-5
VMDSC5H12O2Si16753-62-1
DMDES(CH3)2Si(OC2H5)278-62-6
DMPSC8H12Si766-77-8
(CH3)Si(OCH3)31185-55-3
C13H13F17O3Si83048-65-1
C14H32O3Si2943-75-1
SnSnCl47646-78-8
[CH3(CH2)3]4Sn1461-25-2
Sn(C9H16O2)222673-19-4
SrSr(DPM)2Sr(C10H10F7O2)236885-30-0
280572-89-6
TaPETTa(OC2H5)56074-84-6
TBTEMTTa(NtC4H9)[N(C2H5)CH3]3511292-99-2
TBTDETT-BuN=Ta(NEt2)3169896-41-7
TaimataTa[NC(CH3)2C2H5][N(CH3)2]3440081-38-9
PDMATC10H30N5Ta
TiTiCl47550-45-0
TTIPTi(i-OC3H7)4546-68-9
TDEATTi[N(C2H5)2]44419-47-0
TEMATTi[N(CH3)C2H5]4308103-54-0
TDMATTi[N(CH3)2]43275-24-9
Ti(iPrO)2(DPM)2Ti(C11H19O2)2(O-i-C3H7)2144665-26-9
Ti(MMP)4
VVCl47632-51-1
V(NEtMe)4
YY(DPM)3Y(C11H19O2)315632-39-0
ZnDEZ(C2H5)2Zn557-20-0
Zn(OD)2[CH3COCHCO(CH2)3CH3]2Zn
ZrTEMAZZr[N(CH3)CH2CH3]4175923-04-3
TDEAZZr[N(C2H5)2]413801-49-5
Zr(t-Obu)4Zr[OC(CH3)]42081-12-1
(C5H5)Zr[N(CH3)2]333271-88-4
Zr(dmhd)4Zr(C18H30O4)269990-43-8
Zr(DPM)4Zr(C11H19O2)418865-74-2
Zr(TMOD)4
Zr(MMP)4