{"id":1435,"date":"2023-07-14T18:13:25","date_gmt":"2023-07-14T09:13:25","guid":{"rendered":"https:\/\/lintec-mfc.co.jp\/en\/?page_id=1435"},"modified":"2024-04-02T13:52:32","modified_gmt":"2024-04-02T04:52:32","slug":"liquid-vaporization","status":"publish","type":"page","link":"https:\/\/lintec-mfc.co.jp\/en\/liquid-vaporization\/","title":{"rendered":"Vaporizers and Vaporization Technology"},"content":{"rendered":"\n

In the 1990s, when the semiconductor industry required a stable continuous vaporization supply system for TEOS, Lintec was the first in the world to develop a direct vaporization system using a vaporizer and liquid mass flow.<\/p>\n\n\n\n

Basic Principles of Liquid Vaporization Technology<\/h2>\n\n\n\n
\n
\n
\"Liquid
Liquid vaporization approach<\/figcaption><\/figure>\n\n\n\n

The three states of matter are solid, liquid, and gas, which change with temperature and pressure.<\/p>\n\n\n\n

    \n
  1. Temperature approach:<\/strong>MFC baking method<\/a>, non-carrier vaporizer<\/li>\n\n\n\n
  2. Temperature and pressure approach:<\/strong>Direct vaporization method, bubbling method<\/li>\n\n\n\n
  3. Pressure approach:<\/strong>Low differential pressure MFC (MC-3000S)<\/li>\n<\/ol>\n<\/div>\n\n\n\n
    \n

    Vapor pressure and vapor concentration<\/h3>\n\n\n\n

    The equation for gas concentration is as follows: \u201cpartial pressure \u00f7 total pressure \u00d7 100 = gas concentration (%)\u201d.<\/p>\n\n\n\n

    The partial pressure of liquefied gas cannot exceed the vapor pressure curve.<\/p>\n\n\n\n

    Vapor pressure curve<\/h4>\n\n\n\n

    The state of matter depends on temperature and pressure. When temperature is high, the force (vapor pressure) that causes a liquid to change to gas (vapor) increases, and when temperature is low, the vapor pressure decreases. The vapor pressure curve represents the maximum amount of vapor pressure at a given temperature.<\/p>\n<\/div>\n<\/div>\n\n\n\n

    Introduction of vaporization technology<\/h2>\n\n\n\n
    \n
    \n

    Direct vaporization method<\/a><\/h3>\n\n\n\n
    \"Direct<\/a><\/figure>\n\n\n\n

    This method utilizes a mass flow meter to measure precursor flow rate and a vaporizer to control the flow rate and facilitate the vaporization process. It is widely used in CVD processes for many precursors, for example, TEOS.<\/p>\n<\/div>\n\n\n\n

    \n

    Baking method<\/a><\/span><\/strong><\/h3>\n\n\n\n
    \"Baking<\/a><\/figure>\n\n\n\n

    This method heats the liquid and controls the evaporated gas with a high-temperature gas mass flow controller. It is used in the manufacturing process of optical fiber etc.<\/p>\n<\/div>\n\n\n\n

    \n

    Bubbling method<\/a><\/strong><\/span><\/h3>\n\n\n\n
    \"Bubbling<\/a><\/figure>\n\n\n\n

    This method is conducted by integrating the vaporized gas into the carrier gas by passing the carrier gas through the liquid tank. Mainly used in MOCVD process.<\/p>\n<\/div>\n<\/div>\n\n\n\n

    Liquid Vaporized Feedstock Results<\/h2>\n\n\n\n
    Chemical Element<\/td>Abbreviation<\/td>Chemical Formula<\/td>CAS No.<\/td><\/tr>
    Al<\/td>TMA<\/td>Al(CH3)3<\/td>75-24-1<\/td><\/tr>
    <\/td>TEA<\/td>Al(C2H5)3<\/td>97-93-8<\/td><\/tr>
    <\/td>Al(MMP)3<\/td>Al[CH3OCH2C(CH3)2O]3<\/td>478695-89-5<\/td><\/tr>
    <\/td>DMAH<\/td>H(CH3)2Al<\/td>885-37-2<\/td><\/tr>
    <\/td>ASBO<\/td>Al[OCH(CH3)CH2CH3]3<\/td>2269-22-9<\/td><\/tr>
    B<\/td>TEB<\/td>B(OC2H5)3<\/td>150-46-9<\/td><\/tr>
    <\/td>TMB<\/td>B(OCH3)3<\/td>121-43-7<\/td><\/tr>
    <\/td>TMAB<\/td>B[N(CH3)2]3<\/td>4375-83-1<\/td><\/tr>
    Ba<\/td>Ba(DPM)2<\/td>Ba(C11H19O2)2<\/td>17594-47-7<\/td><\/tr>
    Bi<\/td><\/td>
    Bi(CH3)3 <\/td>
    593-91-9 <\/td><\/tr>
    Ce<\/td>Ce(DPM)4<\/td>Ce(C11H19O2)4<\/td>18960-54-8<\/td><\/tr>
    Cl<\/td><\/td>CCl4<\/td>56-23-5<\/td><\/tr>
    <\/td><\/td>C2H3Cl3<\/td>79-00-5<\/td><\/tr>
    <\/td><\/td>C2Cl4<\/td>127-18-4<\/td><\/tr>
    Co<\/td>Co AMD<\/td><\/td><\/td><\/tr>
    Cu<\/td>Cu(DPM)3<\/td>Cu(C11H19O2)2<\/td>14040-05-2<\/td><\/tr>
    <\/td>Cu(hfac)(TMVS)<\/td>C10H13CuF6O2 Si<\/td>139566-53-3<\/td><\/tr>
    <\/td>Cu(EDMDD)2<\/td>Cu[(CH3)3CC(O)CHC(O)CH(C2H5)C4H9]<\/td><\/td><\/tr>
    Ga<\/td>TEG<\/td>(C2H5)3Ga<\/td>1115-99-7<\/td><\/tr>
    <\/td>TMG<\/td>(CH3)3Ga<\/td>1445-79-0<\/td><\/tr>
    Ge<\/td><\/td>Ge(OC2H5)4<\/td>14165-55-0<\/td><\/tr>
    <\/td><\/td>C4H12GeO4<\/td>992-91-6<\/td><\/tr>
    Hf<\/td>TDMAH<\/td>Hf[N(CH3)2]4<\/td>19782-68-4<\/td><\/tr>
    <\/td>TEMAH<\/td>Hf[N(C2H5)CH3]4<\/td>352535-01-4<\/td><\/tr>
    <\/td>TDEAH<\/td>Hf[N(C2H5)2]4<\/td>19824-55-6<\/td><\/tr>
    <\/td>HTB<\/td>Hf(OtC4H9)4<\/td>2172-02-3<\/td><\/tr>
    I<\/td><\/td>IF5<\/td>7783-66-6<\/td><\/tr>
    In<\/td>In(acac)3<\/td>In(C5H7O2)3<\/td>14405-45-9<\/td><\/tr>
    <\/td>TMI<\/td>(CH3)3In<\/td>3385-78-2<\/td><\/tr>
    <\/td>TEI<\/td>In(C2H5)3<\/td>923-34-2<\/td><\/tr>
    La<\/td>La(TMOD)3<\/td><\/td><\/td><\/tr>
    Nb<\/td>PEN<\/td>Nb(OCH2CH3)5<\/td>3236-82-6<\/td><\/tr>
    Ni<\/td>Ni AMD<\/td><\/td><\/td><\/tr>
    P<\/td>TMOP<\/td>PO(OCH3)3<\/td>512-56-1<\/td><\/tr>
    <\/td>TEPO<\/td>PO(OC2H5)3<\/td>78-40-0<\/td><\/tr>
    <\/td>TMP<\/td>P(CH3O)3<\/td>121-45-9<\/td><\/tr>
    Pb<\/td>Pb(DPM)2<\/td>Pb(C11H19O2)2<\/td>21319-43-7<\/td><\/tr>
    <\/td>Pb(thd)2<\/td><\/td><\/td><\/tr>
    <\/td>Pb(TMOD)2<\/td><\/td><\/td><\/tr>
    Pr<\/td>Pr(EtCp)3<\/td>Pr(C5H4C2H5)3<\/td>108-88-3<\/td><\/tr>
    <\/td>Pr(DPM)3<\/td>Pr(C11H19O2)3<\/td>15492-48-5<\/td><\/tr>
    Pt<\/td><\/td>C9H16Pt<\/td>94442-22-5<\/td><\/tr>
    Ru<\/td>Ru(EtCp)2<\/td>Ru(C2H5C5H4)2<\/td>32992-96-4<\/td><\/tr>
    <\/td>DER<\/td>Ru(C7H9)(C7H11)<\/td>501652-75-1<\/td><\/tr>
    Si<\/td>TEOS<\/td>Si(OC2H5)4<\/td>78-10-4<\/td><\/tr>
    <\/td><\/td>SiCl4<\/td>10026-04-7<\/td><\/tr>
    <\/td>TCS<\/td>SiHCl3<\/td>10025-78-2<\/td><\/tr>
    <\/td>TMOS<\/td>Si(OCH3)4<\/td>681-84-5<\/td><\/tr>
    <\/td>HMDS<\/td>C6H19NSi2<\/td>999-97-3<\/td><\/tr>
    <\/td>HMDSO<\/td>C6H18OSi2 <\/td>107-46-0<\/td><\/tr>
    <\/td>BTBAS<\/td>[(CH3)3CNH]2SiH2<\/td>186598-40-3<\/td><\/tr>
    <\/td>DIBDMS<\/td>C10H24O2Si<\/td>17980-32-4<\/td><\/tr>
    <\/td>TMS<\/td>Si(CH3)4<\/td>75-76-3<\/td><\/tr>
    <\/td>DEMS<\/td>C5H14O2Si<\/td>2031-62-1<\/td><\/tr>
    <\/td><\/td>C3H10Si<\/td>993-07-7<\/td><\/tr>
    <\/td><\/td>CH3Cl3Si<\/td>75-79-6<\/td><\/tr>
    <\/td>OMCTS\u3001D4<\/td>C8H24O4Si4<\/td>556-67-2<\/td><\/tr>
    <\/td>TMCTS<\/td>C4H16O4Si4<\/td>2370-88-9<\/td><\/tr>
    <\/td>TDMAS<\/td>SiH[N(CH3)2]3<\/td>15112-89-7<\/td><\/tr>
    <\/td>TMDS<\/td>C4H15NSi2<\/td>15933-59-2<\/td><\/tr>
    <\/td><\/td>C3H10O3Si<\/td>2487-90-3<\/td><\/tr>
    <\/td><\/td>[(CH2=CH)(CH3)SiO]4<\/td>2554-06-5<\/td><\/tr>
    <\/td>VMDS<\/td>C5H12O2Si<\/td>16753-62-1<\/td><\/tr>
    <\/td>DMDES<\/td>(CH3)2Si(OC2H5)2<\/td>78-62-6<\/td><\/tr>
    <\/td>DMPS<\/td>C8H12Si<\/td>766-77-8<\/td><\/tr>
    <\/td><\/td>(CH3)Si(OCH3)3<\/td>1185-55-3<\/td><\/tr>
    <\/td><\/td>C13H13F17O3Si<\/td>83048-65-1<\/td><\/tr>
    <\/td><\/td>C14H32O3Si<\/td>2943-75-1<\/td><\/tr>
    Sn<\/td><\/td>SnCl4<\/td>7646-78-8<\/td><\/tr>
    <\/td><\/td>[CH3(CH2)3]4Sn<\/td>1461-25-2<\/td><\/tr>
    <\/td><\/td>Sn(C9H16O2)2<\/td>22673-19-4<\/td><\/tr>
    Sr<\/td>Sr(DPM)2<\/td>Sr(C10H10F7O2)2<\/td>36885-30-0<\/td><\/tr>
    <\/td><\/td><\/td>280572-89-6<\/td><\/tr>
    Ta<\/td>PET<\/td>Ta(OC2H5)5<\/td>6074-84-6<\/td><\/tr>
    <\/td>TBTEMT<\/td>Ta(NtC4H9)[N(C2H5)CH3]3<\/td>511292-99-2<\/td><\/tr>
    <\/td>TBTDET<\/td>T-BuN=Ta(NEt2)3<\/td>169896-41-7<\/td><\/tr>
    <\/td>Taimata<\/td>Ta[NC(CH3)2C2H5][N(CH3)2]3<\/td>440081-38-9<\/td><\/tr>
    <\/td>PDMAT<\/td>C10H30N5Ta<\/td><\/td><\/tr>
    Ti<\/td><\/td>TiCl4<\/td>7550-45-0 <\/td><\/tr>
    <\/td>TTIP<\/td>Ti(i-OC3H7)4<\/td>546-68-9<\/td><\/tr>
    <\/td>TDEAT<\/td>Ti[N(C2H5)2]4<\/td>4419-47-0<\/td><\/tr>
    <\/td>TEMAT<\/td>Ti[N(CH3)C2H5]4<\/td>308103-54-0<\/td><\/tr>
    <\/td>TDMAT<\/td>Ti[N(CH3)2]4<\/td>3275-24-9<\/td><\/tr>
    <\/td>Ti(iPrO)2(DPM)2<\/td>Ti(C11H19O2)2(O-i-C3H7)2<\/td>144665-26-9<\/td><\/tr>
    <\/td>Ti(MMP)4<\/td><\/td><\/td><\/tr>
    V<\/td><\/td>VCl4<\/td>7632-51-1<\/td><\/tr>
    <\/td>V(NEtMe)4<\/td><\/td><\/td><\/tr>
    Y<\/td>Y(DPM)3<\/td>Y(C11H19O2)3<\/td>15632-39-0<\/td><\/tr>
    Zn<\/td>DEZ<\/td>(C2H5)2Zn<\/td>557-20-0<\/td><\/tr>
    <\/td>Zn(OD)2<\/td>[CH3COCHCO(CH2)3CH3]2Zn<\/td><\/td><\/tr>
    Zr<\/td>TEMAZ<\/td>Zr[N(CH3)CH2CH3]4<\/td>175923-04-3 <\/td><\/tr>
    <\/td>TDEAZ<\/td>Zr[N(C2H5)2]4<\/td>13801-49-5<\/td><\/tr>
    <\/td>Zr(t-Obu)4<\/td>Zr[OC(CH3)]4<\/td>2081-12-1<\/td><\/tr>
    <\/td><\/td>(C5H5)Zr[N(CH3)2]3<\/td>33271-88-4<\/td><\/tr>
    <\/td>Zr(dmhd)4<\/td>Zr(C18H30O4)2<\/td>69990-43-8<\/td><\/tr>
    <\/td>Zr(DPM)4<\/td>Zr(C11H19O2)4<\/td>18865-74-2<\/td><\/tr>
    <\/td>Zr(TMOD)4<\/td><\/td><\/td><\/tr>
    <\/td>Zr(MMP)4<\/td><\/td><\/td><\/tr><\/tbody><\/table><\/figure>\n","protected":false},"excerpt":{"rendered":"

    In the 1990s, when the semiconductor industry required a stable continuous vaporization supply system for TEOS […]<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":0,"menu_order":3,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/pages\/1435"}],"collection":[{"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/comments?post=1435"}],"version-history":[{"count":21,"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/pages\/1435\/revisions"}],"predecessor-version":[{"id":2581,"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/pages\/1435\/revisions\/2581"}],"wp:attachment":[{"href":"https:\/\/lintec-mfc.co.jp\/en\/wp-json\/wp\/v2\/media?parent=1435"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}